preliminary solid state devices, inc. sft8600/4 features: data sheet #: tr0003b maximum ratings symbol units value v ebo 6 volts emitter-base voltage v cbo 1000 volts collector-base voltage i c 1 collector current amps volts clcc-4 operating and storage temperature i b 100 base current ma designer's data sheet collector-emitter voltage ( r be = 1ks) 400 1000 total device dissipation @ t c = 25 o c @ t a = 25 o c derate above @ t c = 25 o c 1.0 0.4 5.7 thermal resistance, junction to case junction to ambient 1 amp 1000 volts npn transistor v ceo v cer w w mw/ o c o c t j, t stj electrical characteristics symbol units min max 400 1000 bv ceo bv cer collector-emitter breakdown voltage (i c = 10madc) (i c = 20 : adc, r be = 1k s ) v 1000 - collector-base breakdown voltage (i c = 20 : adc) v 6- bv ebo emitter-base breakdown voltage (i e = 20 : adc) : a -10 i cbo collector cutoff current (v cb = 800vdc) bv cbo v - o c/w -65 to +200 ? bvcer to 1000 volts ? very low saturation voltage ? very low leakage ? high gain from 20 ma to 250ma ? gold eutectic die attach ? superior performance over jedec 2n5010-15 series ? high speed switching tf = 0.4 : s typ 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 p d r 2 jc 175 440 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release.
solid state devices, inc. sft8600/4 preliminary min max electrical characteristics symbol units : a emitter cutoff current (v eb = 4v dc ) - i ebo 1 dc current gain * (i c = 5ma dc , v ce = 5v dc ) (i c = 10ma dc , v ce = 5v dc ) (i c = 100ma dc , v ce = 5v dc ) (i c = 250ma dc , v ce = 5v dc ) 30 40 20 15 : a collector cutoff current (v ce = 400v dc ) - i ceo 10 0.3 0.5 collector-emitter saturation voltage * (i c = 20ma dc , i b = 2ma dc ) (i c = 100ma dc , i b = 10ma dc ) v dc base-emitter saturation voltage * (i c = 20ma dc , i b = 2ma dc ) (i c = 100ma dc , i b = 10ma dc ) 200 current gain bandwidth product (i c = 100ma dc , v ce = 10v dc, f = 10mhz) 8 - mhz ft 15 pf output capacitance (v cb = 20v dc , i e = 0a dc, f = 1.0mhz) - c ob v dc (v cc = 125v dc , i c = 100ma dc , i b1 = 20ma dc , i b2 = 40ma dc ) nsec nsec : sec nsec t d t r t s t f - 50 150 3 800 *pulse test: pulse width = 300 : s, duty cycle = 2% 0.8 1.0 delay time rise time storage time fall time case outline: clcc-4 pin 1: collector pin 2: emitter pin 3: base pin 4: n/c hfe v be (set) v ce(sat) - 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773
|
